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NXP Semiconductors - Rectifier diodes Schottky barrier

Numéro de référence PBYR740X
Description Rectifier diodes Schottky barrier
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PBYR740X fiche technique
Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR745F, PBYR745X series
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
SYMBOL
k
1
QUICK REFERENCE DATA
VR = 40 V/ 45 V
a
2 IF(AV) = 7.5 A
VF 0.57 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers
in low voltage, high frequency switched mode power supplies.
The PBYR745F series is supplied in the SOD100 package.
The PBYR745X series is supplied in the SOD113 package.
PINNING
SOD100
SOD113
PIN DESCRIPTION
1 cathode
case
case
2 anode
tab isolated
12
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
Peak repetitive reverse
surge current
Operating junction
temperature
Storage temperature
PBYR7
PBYR7
Ths 103 ˚C
square wave; δ = 0.5; Ths 123 ˚C
square wave; δ = 0.5; Ths 123 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
-
-
-
-
-
-
-
-
-
- 65
MAX.
40F 45F
40X 45X
40 45
40 45
40 45
7.5
15
100
110
1
150
175
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
July 1998
1 Rev 1.200

PagesPages 6
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