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NXP Semiconductors - Rectifier diodes Schottky barrier

Numéro de référence PBYR725D
Description Rectifier diodes Schottky barrier
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PBYR725D fiche technique
Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR725D series
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
k
tab
QUICK REFERENCE DATA
VR = 20 V/ 25 V
a
3 IF(AV) = 7.5 A
VF 0.4 V
GENERAL DESCRIPTION
Schottky rectifier diodes intended
for use as output rectifiers in low
voltage, high frequency switched
mode power supplies.
The PBYR725D series is supplied
in the SOT428 surface mounting
package.
PINNING
PIN DESCRIPTION
1 no connection
2 cathode1
3 anode
tab cathode
SOT428
tab
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
Peak repetitive reverse
surge current
Operating junction
temperature
Storage temperature
PBYR7
Tmb 119 ˚C
square wave; δ = 0.5; Tmb 138 ˚C
square wave; δ = 0.5; Tmb 138 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
-
-
-
-
-
-
-
-
-
- 65
MAX.
20D 25D
20 25
20 25
20 25
7.5
15
100
110
1
150
175
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
1 it is not possible to make connection to pin 2 of the SOT428 package
February 1998
1
Rev 1.000

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