PBYR3060PT Datasheet PDF - NXP Semiconductors
| Part Number | PBYR3060PT | |
| Description | Rectifier diodes schottky barrier | |
| Manufacturers | NXP Semiconductors | |
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Philips Semiconductors
Rectifier diodes
schottky barrier
Product specification
PBYR30100PT series
GENERAL DESCRIPTION
Dual, low leakage, platinum barrier
schottky rectifier diodes in a plastic
envelope featuring low forward
voltage drop and absence of stored
charge. These devices can withstand
reverse voltage transients and have
guaranteed reverse surge capability.
The devices are intended for use in
switched mode power supplies and
high frequency circuits in general
where low conduction and zero
switching losses are important.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VRRM
VF
IO(AV)
PBYR30-
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
MAX.
60PT
60
0.7
30
MAX. MAX. UNIT
80PT 100PT
80 100 V
0.7 0.7 V
30 30 A
PINNING - SOT93
PIN DESCRIPTION
1 Anode 1 (a)
2 Cathode (k)
3 Anode 2 (a)
tab Cathode (k)
PIN CONFIGURATION
tab
123
SYMBOL
a1
k
a2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IO(AV)
IO(RMS)
IFRM
IFSM
I2t
IRRM
IRSM
Tstg
Tj
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Tmb ≤ 139 ˚C
Output current (both diodes
conducting)1
RMS forward current
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode.
I2t for fusing
Repetitive peak reverse current
per diode.
Non-repetitive peak reverse
current per diode.
Storage temperature
Operating junction temperature
square wave; δ = 0.5;
Tmb ≤ 124 ˚C
t = 25 µs; δ = 0.5;
Tmb ≤ 124 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior
to surge; with reapplied
VRWM(max)
t = 10 ms
tp = 2 µs; δ = 0.001
tp = 100 µs
-
-
-
-
-
-
-
-
-
-
-
-65
-
MAX.
UNIT
-60 -80 -100
60 80 100 V
60 80 100 V
60 80 100 V
30 A
43 A
30 A
180 A
200 A
162 A2s
1A
1A
175 ˚C
150 ˚C
1 For output currents in excess of 20 A connection should be made to the exposed metal mounting base.
October 1994
1
Rev 1.100
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Philips Semiconductors
Rectifier diodes
schottky barrier
Product specification
PBYR30100PT series
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1994
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1994
5
Rev 1.100
Preview 5 Page |
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