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NXP Semiconductors - Rectifier diodes schottky barrier

Numéro de référence PBYR3045PTF
Description Rectifier diodes schottky barrier
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PBYR3045PTF fiche technique
Philips Semiconductors
Rectifier diodes
schottky barrier
Product specification
PBYR3045PTF series
GENERAL DESCRIPTION
Dual, low leakage, platinum barrier,
schottky barrier rectifier diodes in a
full pack, plastic envelope featuring
low forward voltage drop and
absence of stored charge. These
devices can withstand reverse
voltage transients and have
guaranteed reverse surge capability.
The devices are intended for use in
switched mode power supplies and
high frequency circuits in general
where low conduction and zero
switching losses are important.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VRRM
VF
IO(AV)
PBYR30-
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
35PTF 40PTF
35 40
0.65 0.65
20 20
45PTF
45
0.65
20
V
V
A
PINNING - SOT199
PIN DESCRIPTION
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
PIN CONFIGURATION
case
1 23
SYMBOL
a1 a2
13
k2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IO(AV)
IO(RMS)
IFRM
IFSM
I2t
IRRM
IRSM
Tstg
Tj
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Ths 113 ˚C
Output current (both diodes
conducting)
RMS forward current
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode.
I2t for fusing
Repetitive peak reverse current
per diode.
Non-repetitive peak reverse
current per diode.
Storage temperature
Operating junction temperature
square wave; δ = 0.5;
Ths 109 ˚C
t = 25 µs; δ = 0.5;
Ths 109 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior
to surge; with reapplied
VRWM(max)
t = 10 ms
tp = 2 µs; δ = 0.001
tp = 100 µs
-
-
-
-
-
-
-
-
-
-
-
-65
-
MAX.
-35 -40 -45
35 40 45
35 40 45
35 40 45
20
20
30
135
150
91
2
2
175
150
UNIT
V
V
V
A
A
A
A
A
A2s
A
A
˚C
˚C
August 1996
1
Rev 1.100

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