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NXP Semiconductors - Rectifier diodes Schottky barrier

Numéro de référence PBYR2540CTF
Description Rectifier diodes Schottky barrier
Fabricant NXP Semiconductors 
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PBYR2540CTF fiche technique
Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR2545CTF, PBYR2545CTX
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
SYMBOL
a1
1
k2
a2
3
QUICK REFERENCE DATA
VR = 40 V/ 45 V
IO(AV) = 20 A
VF 0.65V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended
for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR2545CTF is supplied in the SOT186 package.
The PBYR2545CTX is supplied in the SOT186A package.
PINNING
SOT186
SOT186A
PIN DESCRIPTION
1 anode 1 (a)
case
case
2 cathode (k)
3 anode 2 (a)
tab isolated
12 3
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IO(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
PBYR25
PBYR25
-
-
Ths 86 ˚C
square wave; δ = 0.5;
Ths 98 ˚C
square wave; δ = 0.5;
Ths 98 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
-
-
-
-
-
-
-
- 65
MAX.
40CTF
40CTX
40
45CTF
45CTX
45
40 45
40
20
45
UNIT
V
V
V
A
20 A
135 A
150 A
1A
150 ˚C
175 ˚C
October 1998
1
Rev 1.300

PagesPages 6
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