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NXP Semiconductors - Rectifier diodes Schottky barrier

Numéro de référence PBYR2080CT
Description Rectifier diodes Schottky barrier
Fabricant NXP Semiconductors 
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PBYR2080CT fiche technique
Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR20100CT, PBYR20100CTB series
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
a1
1
k2
a2
3
QUICK REFERENCE DATA
VR = 60 V/ 80 V/ 100 V
IO(AV) = 20 A
VF 0.7 V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting
plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR20100CT series is supplied in the SOT78 conventional leaded package.
The PBYR20100CTB series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN DESCRIPTION
1 anode 1 (a)
tab
tab
2 cathode (k) 1
3 anode 2 (a)
2
tab cathode (k)
1 23
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
VRWM
VR
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Tmb 139 ˚C
PBYR20
60CT 80CT 100CT
PBYR20
60CTB 80CTB 100CTB
- 60 80 100
- 60 80 100
- 60 80 100
IO(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
square wave; δ = 0.5;
Tmb 133 ˚C
square wave; δ = 0.5;
Tmb 133 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
-
-
-
-
-
-
- 65
20
20
135
150
1
150
175
1. It is not possible to make connection to pin 2 of the SOT404 package.
V
V
V
A
A
A
A
A
˚C
˚C
November 1998
1
Rev 1.300

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