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PDF QSX7 Data sheet ( Hoja de datos )
| Número de pieza | QSX7 | |
| Descripción | General purpose amplification (12V/ 1.5A) | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistors
QSX7
General purpose amplification (12V, 1.5A)
QSX7
zApplication
Low frequency amplifier
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) 200mV
At IC = 500mA / IB = 25mA
zExternal dimensions (Unit : mm)
2.8
1.6
Each lead has same dimensions
Abbreviated symbol : X07
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
15
Collector-emitter voltage
VCEO
12
Emitter-base voltage
VEBO
6
Collector current
IC 1.5
ICP 3
500
Power dissipation
PC 1.25
0.9
Junction temperature
Tj 150
Range of storage temperature Tstg −55 to +150
∗1 Single pulse, PW=1ms
∗2 Each Terminal Mounted on a Recommended
∗3 Mounted on a 25mm×25mm× t 0.8mm Ceramic substrate
Unit
V
V
V
A
A ∗1
mW/TOTAL ∗2
W/TOTAL ∗3
W/ELEMENT ∗3
°C
°C
zEquivalent circuit
(6) (5) (4)
Tr1 Tr2
(1) (2) (3)
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 15 − − V IC=10µA
Collector-emitter breakdown voltage BVCEO 12 − − V IC=1mA
Emitter-base breakdown voltage
BVEBO 6
−−
V IE=10µA
Collector cutoff current
ICBO − − 100 nA VCB=15V
Emitter cutoff current
IEBO − − 100 nA VEB=6V
Collector-emitter saturation voltage
DC current gain
Transition frequency
VCE(sat)
−
85 200 mV IC/IB=500mA/25mA
hFE 270 − 680 − VCE/IC=2V/200mA
∗
fT − 400 − MHz VCE=2V, IE=−200mA, f=100MHz ∗
Collector output capacitance
Cob − 12 − pF VCB=10V, IE=0A, f=1MHz
∗ Pulsed
Rev.B
1/2
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet QSX7.PDF ] | |
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