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PDF QS6M4 Data sheet ( Hoja de datos )
| Número de pieza | QS6M4 | |
| Descripción | Small switching | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistors
Small switching
QS6M4
QS6M4
zFeatures
1) The QS6M4 combines Pch Trench MOSFET with a
Nch Trench MOSFET in a single TSMT6 package.
2) Pch Trench MOSFET and Nch Trench MOSFET
have a low on-state resistance with a fast switching.
3) Pch Trench MOSFET is neucted a low voltage drive
(2.5V).
zApplications
Load switch, inverter
zExternal dimensions (Unit : mm)
TSMT6
1pin mark
2.8
1.6
Each lead has same dimensions
Abbreviated symbol : M04
zStructure
Silicon P-channel MOS FET
Silicon N-channel MOS FET
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
QS6M4
Taping
TR
3000
zEquivalent circuit
(6) (5) (4)
∗1
∗2 ∗2
∗1
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗ Pw≤10µs, Duty cycle≤1%
Symbol
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
Tstg
Limits
Nchannel Pchannel
30 −20
12 −12
±1.5
±1.5
±6.0
±6.0
0.8 −0.75
6.0 −6.0
1.25
150
−55 to +150
Unit
V
V
A
A∗
A
A∗
W
°C
°C
zThermal resistance (Ta=25°C)
Parameter
Channel to ambient
Symbol
Rth (ch-a)
Limits
100
Unit
°C / W
1/5
1 page  
Transistors
P-ch
zElectrical characteristic curves
1000
Ta=25°C
f=1MHz
VGS=0V
Ciss
100
Coss
Crss
10
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : −VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
1000
tf
100
td (off)
td (on)
10
tr
Ta=25°C
VDD= −15V
VGS= −4.5V
RG=10Ω
Pulsed
1
0.01 0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.2 Switching Characteristics
QS6M4
8
Ta=25°C
7 VDD= −15V
ID= −1.5A
6 RG=10Ω
Pulsed
5
4
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
1 Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
VDS= −10V
Pulsed
0.01
0.001
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.4 Typical Transfer Characteristics
500
Ta=25°C
Pulsed
400
ID= −1.5A
ID= −0.75A
300
200
100
0
0 2 4 6 8 10 12
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
10
Ta=25°C
VGS=0V
Pulsed
1
0.1
0.01
0.0 0.5 1.0 1.5 2.0
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
10000
Ta=125°C
Ta=75°C
1000 Ta=25°C
Ta= −25°C
100
VGS= −4.5V
Pulsed
10000
Ta=125°C
Ta=75°C
1000 Ta=25°C
Ta= −25°C
100
VGS= −4V
Pulsed
10000
Ta=125°C
Ta=75°C
Ta=25°C
1000 Ta= −25°C
100
VGS= −2.5V
Pulsed
10
0.1 1 10
DRAIN CURRENT : −ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
10
0.1 1 10
DRAIN CURRENT : −ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
10
0.1 1 10
DRAIN CURRENT : −ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
5/5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet QS6M4.PDF ] | |
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