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NXP Semiconductors - Rectifier diodes Schottky barrier

Numéro de référence PBYR1060
Description Rectifier diodes Schottky barrier
Fabricant NXP Semiconductors 
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PBYR1060 fiche technique
Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR10100 series
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
k
1
QUICK REFERENCE DATA
VR = 60 V/ 80 V/ 100 V
a
2 IF(AV) = 10 A
VF 0.7 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
The PBYR10100 series is supplied
in the conventional leaded SOD59
(TO220AC) package.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
tab cathode
SOD59 (TO220AC)
tab
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR10
60 80 100
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Tmb 139 ˚C
- 60 80 100 V
- 60 80 100 V
- 60 80 100 V
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
Peak repetitive reverse
surge current
Operating junction
temperature
Storage temperature
square wave; δ = 0.5; Tmb 133 ˚C
square wave; δ = 0.5; Tmb 133 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
-
-
-
-
-
-
- 65
10
20
135
150
1
150
175
A
A
A
A
A
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
in free air
MIN. TYP. MAX. UNIT
- - 2 K/W
- 60 - K/W
March 1998
1
Rev 1.200

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