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QM600HD-M fiches techniques PDF

Mitsubishi Electric Semiconductor - HIGH POWER SWITCHING USE NON-INSULATED TYPE

Numéro de référence QM600HD-M
Description HIGH POWER SWITCHING USE NON-INSULATED TYPE
Fabricant Mitsubishi Electric Semiconductor 
Logo Mitsubishi Electric Semiconductor 





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QM600HD-M fiche technique
QM600HD-M
MITSUBISHI TRANSISTOR MODULES
QM600HD-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
IC Collector current ........................ 600A
VCEX Collector-emitter voltage ........... 350V
hFE DC current gain............................. 500
Non-Insulated Type
APPLICATION
Robotics, Forklifts, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
94
80
EE
φ5.5
8
B BX
17
14 12 22
25
M4
64
M6
LABEL
B
E
Dimensions in mm
C
E
BX
Feb.1999

PagesPages 4
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