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QM50TB-2HB fiches techniques PDF

Mitsubishi Electric Semiconductor - MEDIUM POWER SWITCHING USE INSULATED TYPE

Numéro de référence QM50TB-2HB
Description MEDIUM POWER SWITCHING USE INSULATED TYPE
Fabricant Mitsubishi Electric Semiconductor 
Logo Mitsubishi Electric Semiconductor 





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QM50TB-2HB fiche technique
QM50TB-2HB
MITSUBISHI TRANSISTOR MODULES
QM50TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
IC Collector current .......................... 50A
VCEX Collector-emitter voltage ......... 1000V
hFE DC current gain............................. 750
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
7–M4
102±0.5
6 14 6 14 6 17
4–φ5.5
BuP EuP BvP EvP BwPEwP
P BuN EuN BvN EvN BwN EwN
P
UVW
N
N 10
2
22 20 20 22
80±0.25
11
LABEL
BuP
P EuP
BuN
EuN
U
N
BvP
EvP
BvN
EvN
V
BwP
EwP
BwN
EwN
W
P
N
Tab#110, t=0.5
Note: All Transistor Units are 4-Stage Darlingtons.
Feb.1999

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