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Numéro de référence | QM50TB-2HB | ||
Description | MEDIUM POWER SWITCHING USE INSULATED TYPE | ||
Fabricant | Mitsubishi Electric Semiconductor | ||
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1 Page
QM50TB-2HB
MITSUBISHI TRANSISTOR MODULES
QM50TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
• IC Collector current .......................... 50A
• VCEX Collector-emitter voltage ......... 1000V
• hFE DC current gain............................. 750
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
7–M4
102±0.5
6 14 6 14 6 17
4–φ5.5
BuP EuP BvP EvP BwPEwP
P BuN EuN BvN EvN BwN EwN
P
UVW
N
N 10
2
22 20 20 22
80±0.25
11
LABEL
BuP
P EuP
BuN
EuN
U
N
BvP
EvP
BvN
EvN
V
BwP
EwP
BwN
EwN
W
P
N
Tab#110, t=0.5
Note: All Transistor Units are 4-Stage Darlingtons.
Feb.1999
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Pages | Pages 5 | ||
Télécharger | [ QM50TB-2HB ] |
No | Description détaillée | Fabricant |
QM50TB-2H | MEDIUM POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor |
QM50TB-2HB | MEDIUM POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor |
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