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PDF QM50DY-HB Data sheet ( Hoja de datos )
| Número de pieza | QM50DY-HB | |
| Descripción | MEDIUM POWER SWITCHING USE INSULATED TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
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QM50DY-HB
MITSUBISHI TRANSISTOR MODULES
QM50DY-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
• IC Collector current .......................... 50A
• VCEX Collector-emitter voltage ........... 600V
• hFE DC current gain............................. 750
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
94
80
20 20 20
3–M5
C2E1 E2
C1
2– φ6.5
20 4 16 4 20
7
Tab#110, t=0.5
C2E1
LABEL
E2
B2
E2
C1
E1
B1
Feb.1999
1 page  
MITSUBISHI TRANSISTOR MODULES
QM50DY-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
500
400
300
200
100
0
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE )
10 0 2 3 4 5 710 1 2 3 4 5 7
2.0
1.6
1.2
0.8
0.4
0
10 –3 2 3 4 5 710 –22 3 4 5 7 10 –12 3 4 5 7 10 0
TIME (s)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
10 2 10 2
7
5
3
2
10 1 Irr
7
10 1
5
3
2 Qrr
VCC=300V
IB1=100mA
IB2=–1.0A
10 0 10 0
7
5
3 trr
2
Tj=25°C
10 –1
Tj=125°C 10 –1
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
FORWARD CURRENT IF (A)
Feb.1999
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet QM50DY-HB.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| QM50DY-H | MEDIUM POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor |
| QM50DY-HB | MEDIUM POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor |
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