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PBYR1045D fiches techniques PDF

NXP Semiconductors - Rectifier diodes Schottky barrier

Numéro de référence PBYR1045D
Description Rectifier diodes Schottky barrier
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PBYR1045D fiche technique
Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR1045D series
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
k
tab
QUICK REFERENCE DATA
VR = 40 V/ 45 V
a
3 IF(AV) = 10 A
VF 0.57 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
The PBYR1045D series is supplied
in the surface mounting SOT428
package.
PINNING
PIN DESCRIPTION
1 no connection
2 cathode1
3 anode
tab cathode
SOT428
tab
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
Peak repetitive reverse
surge current
Operating junction
temperature
Storage temperature
PBYR10
Tmb 113 ˚C
square wave; δ = 0.5; Tmb 134 ˚C
square wave; δ = 0.5; Tmb 134 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
-
-
-
-
-
-
-
-
-
- 65
MAX.
40D 45D
40 45
40 45
40 45
10
20
100
110
1
150
175
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
1 It is not possible to make connection to pin 2 of the SOT428 package.
July 1998
1
Rev 1.100

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