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PBYL1620B fiches techniques PDF

NXP Semiconductors - Rectifier diodes Schottky barrier

Numéro de référence PBYL1620B
Description Rectifier diodes Schottky barrier
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PBYL1620B fiche technique
Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYL1625B series
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
k
tab
QUICK REFERENCE DATA
VR = 20 V/ 25 V
a
3 IF(AV) = 16 A
VF 0.46 V
GENERAL DESCRIPTION
Schottky rectifier diodes intended
for use as output rectifiers in low
voltage, high frequency switched
mode power supplies.
The PBYL1625B series is supplied
in the SOT404 surface mounting
package.
PINNING
PIN DESCRIPTION
1 no connection
2 cathode 1
3 anode
tab cathode
SOT404
tab
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Tmb 120 ˚C
PBYL16
IF(AV) Average rectified forward square wave; δ = 0.5; Tmb 131 ˚C
current
IFRM
Repetitive peak forward
square wave; δ = 0.5; Tmb 131 ˚C
current
IFSM Non-repetitive peak forward t = 10 ms
current
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
IRRM Peak repetitive reverse pulse width and repetition rate
surge current
limited by Tj max
Tj Operating junction
temperature
Tstg Storage temperature
1. It is not possible to make connection to pin 2 ofthe SOT404 package.
-
-
-
-
-
-
-
-
-
- 65
MAX.
20B 25B
20 25
20 25
20 25
16
32
135
150
1
150
175
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
October 1998
1
Rev 1.100

PagesPages 5
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