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PDF QM20TD-HB Data sheet ( Hoja de datos )
| Número de pieza | QM20TD-HB | |
| Descripción | MEDIUM POWER SWITCHING USE INSULATED TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
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QM20TD-HB
MITSUBISHI TRANSISTOR MODULES
QM20TD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
• IC Collector current .......................... 20A
• VCEX Collector-emitter voltage ........... 600V
• hFE DC current gain............................. 250
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
(30.5) 7 15 7 15 7 (23.5)
11 25.5
25.5
2
φ5.5
Fig. 1
4
φ1.2 2.8
Fig. 2
8.0
6.35 φ1.65
76
93
105
Tab#250, t=0.8(Fig. 2)
Tab#110, t=0.5(Fig. 1)
LABEL
P
BuP
EuP
u
BuN
EuN
N
BvP BwP
EvP EwP
vw
BvN BwN
EvN EwN
Note: All Transistor Units are Darlingtons.
Feb.1999
1 page  
MITSUBISHI TRANSISTOR MODULES
QM20TD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
200
180
160
140
120
100
80
60
40
20
0
10 0 2 3 4 5 7 10 1
2 3 4 5 7 10 2
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
10 0 2 3 5 710 1
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10 –3 2 3 5 710 –2 2 3 5 710 –12 3 5 7 10 0
TIME (s)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
10 1
7 VCC=300V
5
4
IB1=120mA
IB2=–400mA
3
2
10 2
Qrr
10 0
7
5
4
3
2
10 –1
10 0
Irr 10 1
trr
Tj=25°C
Tj=125°C
2 3 4 5 7 101
10 0
2 3 4 5 7 102
FORWARD CURRENT IF (A)
Feb.1999
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet QM20TD-HB.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| QM20TD-H | MEDIUM POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor |
| QM20TD-HB | MEDIUM POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor |
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