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PDF RD30HUF1 Data sheet ( Hoja de datos )
| Número de pieza | RD30HUF1 | |
| Descripción | Silicon MOSFET Power Transistor/520MHz/30W | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD30HUF1
Silicon MOSFET Power Transistor,520MHz,30W
DESCRIPTION
RD30HUF1 is a MOS FET type transistor specifically
designed for UHF RF power amplifiers applications.
FEATURES
•High power gain:
Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz
•High Efficiency: 55%typ.
APPLICATION
For output stage of high power amplifiers in UHF
band mobile radio sets.
OUTLINE DRAWING
22.0+/-0.3
18.0+/-0.3
7.2+/-0.5 7.6+/-0.3
1
3
2.8+/-0.3
2
4-C1
R1.6
PIN
1.Drain
2.Source
3.Gate
UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS RATINGS UNIT
VDSS Drain to source voltage
30 V
VGSS Gate to source voltage
+/-20
V
Pch Channel dissipation Tc=25°C
75 W
Pin Input power
Zg=Zl=50Ω
7.5 W
Tj Junction temperature
175 °C
Tstg Storage temperature
-40 to +175 °C
Rth-c
Thermal resistance
Junction to case 2.0 °C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zero gate voltage drain current VDS=17V, VGS=0V
- - 200
IGSS Gate to source leak current
VGS=10V, VDS=0V
--
1
VTH Gate threshold voltage
VDS=12V, IDS=1mA
1.3 1.8 2.3
Pout Output power
f=520MHz,VDD=12.5V
30 35
-
ηD1 Drain efficiency
Pin=3.0W,Idq=1.0A
50 55
-
Load VSWR tolerance
VDD=15.2V,Po=30W(PinControl)
Idq=1.0A,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy
Note : Above parameters , ratings , limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
RD30HUF1
MITSUBISHI ELECTRIC
1/7
REV.1 14 MAY. 2003
1 page  
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD30HUF1
Silicon MOSFET Power Transistor,520MHz,30W
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
f=520MHz Zin
f=480MHz Zin
f=440MHz Zin
f=520MHz Zout
f=480MHz Zout
f=440MHz Zout
Zo=10Ω
Zin , Zout
F
(MHz)
440
480
520
Zin
(ohm)
1.16-j0.14
0.90+j0.35
0.88+j0.84
Zout
(ohm)
1.17+j0.74
1.15+j1.07
1.47+j1.24
Conditions
Po=40W, Vdd=12.5V,Pin=3.0W
Po=38W, Vdd=12.5V,Pin=3.0W
Po=35W, Vdd=12.5V,Pin=3.0W
RD30HUF1
MITSUBISHI ELECTRIC
5/7
REV.1 14 MAY. 2003
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RD30HUF1.PDF ] | |
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