RBV806D Datasheet PDF - EIC discrete Semiconductors
| Part Number | RBV806D | |
| Description | SILICON BRIDGE RECTIFIERS | |
| Manufacturers | EIC discrete Semiconductors | |
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RBV800D - RBV810D
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* Ideal for printed circuit board
* Very good heat dissipation
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
RBV25
3.9 ± 0.2
C3 30 ± 0.3 4.9 ± 0.2
∅3.2 ± 0.1
+ ∼∼
1.0 ± 0.1
10 7.5 7.5
±0.2 ±0.2 ±0.2
2.0 ± 0.2
0.7 ± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
SYMBOL
VRRM
RBV
800D
50
RBV
801D
100
RBV
802D
200
RBV
804D
400
RBV
806D
600
RBV
808D
800
RBV
810D
1000
UNIT
Volts
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55°C
IF(AV)
8.0 Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
IFSM
I2t
300 Amps.
166 A2S
Maximum Forward Voltage per Diode at IF = 8.0 Amps. VF
1.0 Volts
Maximum DC Reverse Current
Ta = 25 °C
IR
10 µA
at Rated DC Blocking Voltage
Ta = 100 °C
IR(H)
200
µA
Typical Thermal Resistance (Note 1)
RθJC
2.2 °C/W
Typical Thermal Resistance at Junction to Ambient
Operating Junction Temperature Range
RθJA
TJ
15
- 40 to + 150
°C/W
°C
Storage Temperature Range
TSTG
- 40 to + 150
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 3.2"x3.2"x0.12" THK (8.2cm.x8.2cm.x0.3cm.) Al. Plate. heatsink.
UPDATE : AUGUST 3, 1998
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for RBV806D electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ RBV806D.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| RBV806 | The function is SILICON BRIDGE RECTIFIERS. EIC discrete Semiconductors | |
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| RBV806S | The function is Molding Single-Phase Bridge Rectifier. SeCoS |  |
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