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EIC discrete Semiconductors - SILICON BRIDGE RECTIFIERS

Numéro de référence RBV801
Description SILICON BRIDGE RECTIFIERS
Fabricant EIC discrete Semiconductors 
Logo EIC discrete Semiconductors 





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RBV801 fiche technique
RBV800 - RBV810
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 V DC
* Ideal for printed circuit board
* Very good heat dissipation
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
RBV25
3.9 ± 0.2
C3 30 ± 0.3 4.9 ± 0.2
∅3.2 ± 0.1
+ ∼∼
1.0 ± 0.1
10 7.5 7.5
±0.2 ±0.2 ±0.2
2.0 ± 0.2
0.7 ± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
SYMBOL
VRRM
RBV
800
50
RBV
801
100
RBV
802
200
RBV
804
400
RBV
806
600
RBV
808
800
RBV
810
1000
UNIT
Volts
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55°C
I F(AV)
8.0 Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
I FSM
I2t
300 Amps.
160 A2S
Maximum Forward Voltage per Diode at IF = 4.0 Amps. VF
1.0 Volts
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
IR
I R(H)
RθJC
10 µA
200 µA
2.5 °C/W
Operating Junction Temperature Range
TJ
- 40 to + 150
°C
Storage Temperature Range
T STG
- 40 to + 150
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 3.2"x3.2"x0.12" THK (8.2cm.x8.2cm.x0.3cm.) Al. Plate. heatsink.
UPDATE : AUGUST 3, 1998

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