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RBV602D fiches techniques PDF

EIC discrete Semiconductors - SILICON BRIDGE RECTIFIERS

Numéro de référence RBV602D
Description SILICON BRIDGE RECTIFIERS
Fabricant EIC discrete Semiconductors 
Logo EIC discrete Semiconductors 





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RBV602D fiche technique
RBV600D - RBV610D SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 6.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* Ideal for printed circuit board
* Very good heat dissipation
RBV25
3.9 ± 0.2
C3
30 ± 0.3
4.9 ± 0.2
∅3.2 ± 0.1
+ ∼∼
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
1.0 ± 0.1
10 7.5 7.5
±0.2 ±0.2 ±0.2
2.0 ± 0.2
0.7 ± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
SYMBOL
RBV
600D
VRRM
50
Maximum RMS Voltage
VRMS
35
Maximum DC Blocking Voltage
VDC 50
Maximum Average Forward Current Tc = 55°C
IF(AV)
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
IFSM
I2t
Maximum Forward Voltage per Diode at IF = 6.0 Amps. VF
Maximum DC Reverse Current
Ta = 25 °C
IR
at Rated DC Blocking Voltage
Ta = 100 °C
IR(H)
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
RθJC
TJ
Storage Temperature Range
TSTG
RBV
601D
100
70
100
RBV
602D
200
RBV
604D
400
RBV
606D
600
140 280 420
200 400 600
6.0
300
127
1.0
10
200
2.2
- 40 to + 150
- 40 to + 150
RBV
608D
800
560
800
RBV
610D
UNIT
1000 Volts
700 Volts
1000 Volts
Amps.
Amps.
A2S
Volts
µA
µA
°C/W
°C
°C
Notes :
1. Thermal Resistance from junction to case w ith units mounted on a 2.6"x1.4"x0.06" THK (6.5cm.x3.5cm.x0.15cm.) Al. Plate. Heatsink.
UPDATE : AUGUST 3, 1998

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