DataSheetWiki


RBV1502D fiches techniques PDF

EIC discrete Semiconductors - SILICON BRIDGE RECTIFIERS

Numéro de référence RBV1502D
Description SILICON BRIDGE RECTIFIERS
Fabricant EIC discrete Semiconductors 
Logo EIC discrete Semiconductors 





1 Page

No Preview Available !





RBV1502D fiche technique
RBV1500D - RBV1510D SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
RBV25
Io : 15 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* Ideal for printed circuit board
* Very good heat dissipation
C3 30 ± 0.3
3.9 ± 0.2
4.9 ± 0.2
3.2 ± 0.1
+ ~~
1.0 ± 0.1
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
10 7.5 7.5
±0.2 ±0.2 ±0.2
2.0 ± 0.2
0.7 ± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
RBV RBV RBV RBV RBV RBV RBV
SYMBOL 1500D 1501D 1502D 1504D 1506D 1508D 1510D UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55°C
IF(AV)
15 Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
IFSM
I2t
300 Amps.
375 A2S
Maximum Forward Voltage per Diode at IF = 15 Amps. VF
1.0 Volts
Maximum DC Reverse Current
Ta = 25 °C
IR
10 µA
at Rated DC Blocking Voltage
Ta = 100 °C
IR(H)
200 µA
Typical Thermal Resistance (Note 1)
RθJC
1.5 °C/W
Operating Junction Temperature Range
TJ
- 40 to + 150
°C
Storage Temperature Range
TSTG
- 40 to + 150
°C
Notes : 1. Thermal Resistance from junction to case with units mounted on a 5" x 4" x 3" (12.7cm.x 10.2cm.x 7.3cm.) Al.-Finned Plate.
UPDATE : NOVEMBER 1,1998

PagesPages 2
Télécharger [ RBV1502D ]


Fiche technique recommandé

No Description détaillée Fabricant
RBV1502 Silicon Bridge Rectifiers LGE
LGE
RBV1502 Silicon Bridge Rectifiers Galaxy Microelectronics
Galaxy Microelectronics
RBV1502 SILICON BRIDGE RECTIFIERS EIC discrete Semiconductors
EIC discrete Semiconductors
RBV1502D SILICON BRIDGE RECTIFIERS EIC discrete Semiconductors
EIC discrete Semiconductors

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche