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What is RBV1001?

This electronic component, produced by the manufacturer "EIC discrete Semiconductors", performs the same function as "SILICON BRIDGE RECTIFIERS".


RBV1001 Datasheet PDF - EIC discrete Semiconductors

Part Number RBV1001
Description SILICON BRIDGE RECTIFIERS
Manufacturers EIC discrete Semiconductors 
Logo EIC discrete Semiconductors Logo 


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RBV1000 - RBV1010
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 10 Amperes
RBV25
C3 30 ± 0.3
3.9 ± 0.2
4.9 ± 0.2
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 V DC
* Ideal for printed circuit board
* Very good heat dissipation
3.2 ± 0.1
+ ~~
1.0 ± 0.1
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
10 7.5 7.5
±0.2 ±0.2 ±0.2
2.0 ± 0.2
0.7 ± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 5.0 Amps.
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
VRRM
VRMS
VDC
I F(AV)
IFSM
I2t
VF
IR
IR(H)
RθJC
TJ
T STG
RBV
1000
50
35
50
RBV
1001
100
70
100
RBV
1002
200
140
200
RBV
1004
400
280
400
10
RBV
1006
600
420
600
300
160
1.0
10
200
2.5
- 40 to + 150
- 40 to + 150
RBV
1008
800
560
800
RBV
1010
UNIT
1000 Volts
700 Volts
1000 Volts
Amps.
Amps.
A2S
Volts
µA
µA
°C/W
°C
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
UPDATE : NOVEMBER 1,1998


Part Details

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Information Total 2 Pages
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RBV1001The function is SILICON BRIDGE RECTIFIERS. EIC discrete SemiconductorsEIC discrete Semiconductors

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