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ROHM Semiconductor - Schottky barrier diode

Numéro de référence RB751V-40
Description Schottky barrier diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB751V-40 fiche technique
Diodes
Schottky barrier diode
RB751V-40
zApplications
Low current rectification
zFeatures
1) Ultra small mold type. (UMD2)
2) Low VF
3) High reliability
zExternal dimensions (Unit : mm)
1.25±0.1
0.1±0.1
    0.05
zConstruction
Silicon epitaxial planar
0.3±0.05
ROHM : UMD2
JEDEC : S0D-323
JEITA : SC-90/A
dot (year week factory)
0.7±0.2
    0.1
zTaping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
RB751V-40
zLand size figure
0.9MIN.
UMD2
zStructure
0.3±0.1
1.40±0.1
zAbsolute maximum ratings (Ta=25°C)
Param eter
Revers e voltage (repetitive peak)
Revers e voltage (DC)
Average rectified forward current
Forward current s urge peak 60Hz1cyc
Junction tem perature
Storage tem perature
Sym bol
VRM
VR
Io
IFSM
Tj
Ts tg
4.0±0.1
φ1.05
Lim its
40
30
30
200
125
-40 to +125
Unit
V
V
mA
mA
1.0±0.1
zElectrical characteristic (Ta=25°C)
Param eter
Forward voltage
Revers e current
Capacitance between term inal
Sym bol Min. Typ. Max.
VF - - 0.37
IR - - 0.5
Ct - 2 -
Unit Conditions
V IF=1m A
µA VR=30V
pF VR=1V , f=1MHz
Rev.B
1/3

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