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ROHM Semiconductor - Schottky barrier diode

Numéro de référence RB715W
Description Schottky barrier diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB715W fiche technique
Data Sheet
Shottky barrier diode
RB715W
Applications
Low current rectification
Features
1) Ultra small power mold type. (EMD3)
2) Low IR
3) High reliability.
Construction
Silicon epitaxial planar
Dimensions (Unit : mm)
1.6± 0.2
0.3±0.1
    0.05
(3)
0.15±0.05
Land size figure (Unit : mm)
1.0
0.5 0.5
0.7
0 .2± 0.1
  - 0.05
(2)
0.5 0.5
1.0±0.1
(1)
0~0.1
0.55±0.1
0.7±0.1
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
0.6
EMD3
Structure
0.6
Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φφ1.15.55±00..1
     00
0.3±0.1
1.8±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz1cyc) (*1)
Junction temperature
Storage temperature
(*1) Rating of per diode
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
φ0.5±0.1
Limits
40
40
30
200
125
40 to 125
Unit
V
V
mA
mA
°C
°C
0.9±0.2
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min. Typ. Max.
VF - - 0.37
IR - - 1
Ct - 2.0 -
Unit Conditions
V IF=1mA
μA VR=10V
pF VR=1.0V f=1.0MHz
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.C

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