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RB715F fiches techniques PDF

ROHM Semiconductor - Schottky barrier diode

Numéro de référence RB715F
Description Schottky barrier diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB715F fiche technique
Diodes
Schottky barrier diode
RB715W / RB715F
RB715W / RB715F
!Applications
General purpose detection
High speed switching
!Features
1) Small surface mounting type.
(EMD3, UMD3)
2) Low VF and low IR
3) High reliability
!Construction
Silicon epitaxial planar
!Circuit
!External dimensions (Units : mm)
RB715W
RB715F
0.2
+0.1
0.05
1.6±0.2
1.0±0.1
0.5 0.5
0.2
+0.1
0.05
(1) (2)
0.7±0.1
0.55±0.1
0~0.1
(3)
0.3
+0.1
0.05
0.15±0.05
ROHM : EMD3
EIAJ : SC - 75
JEDEC : SOT - 416
2.0±0.2
1.3±0.1
0.65 0.65
0.9±0.1
0.3 0.6
(1) (2)
(3)
0.3±0.1
0.15±0.05
(All pins have the same dimensions)
0~0.1
ROHM : UMD3
EIAJ : SC - 70
JEDEC : SOT - 323
!Absolute maximum ratings (Ta=25°C)
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
60 Hz for 1
Symbol
VRM
VR
IO
IFSM
Tj
Tstg
Limits
40
40
30
200
125
40~+125
Unit
V
V
mA
mA
°C
°C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Forward voltage
Reverse current
Capacitance between terminals
VF
IR
CT
Note) ESD sensitive product handling required.
Min.
Typ.
2.0
Max.
0.37
1
Unit Conditions
V IF=1mA
µA VR=10V
pF VR=1V, f=1MHz

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