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RB521G-30 fiches techniques PDF

ROHM Semiconductor - Schottky barrier diode

Numéro de référence RB521G-30
Description Schottky barrier diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB521G-30 fiche technique
Diodes
Schottky barrier diode
RB521G-30
RB521G-30
zApplication
Rectifying small power
zFeatures
1) Ultra small mold type. (VMD2)
2) High reliability
zConstruction
Silicon epitaxial planer
zExternal dimensions (Units : mm)
0.6±0.05
0.27±0.03
CATHODE MARK
0.13±0.03
ROHM : VMD2
EIAJ :
JEDEC :
0.5±0.05
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak
Junction temperature
Storage temperature
60Hz, 1cyc.
Symbol
VR
IO
IFSM
Tj
Tstg
Limits
30
100
1
125
40~+125
Unit
V
mA
A
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Forward voltage
VF
Reverse current
IR
Please pay attention to static electricity when handling.
Typ.
Max.
0.350
10
Unit
V IF=10mA
µA VR=10V
Conditions
1/2

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