|
|
Numéro de référence | RB521G-30 | ||
Description | Schottky barrier diode | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Diodes
Schottky barrier diode
RB521G-30
RB521G-30
zApplication
Rectifying small power
zFeatures
1) Ultra small mold type. (VMD2)
2) High reliability
zConstruction
Silicon epitaxial planer
zExternal dimensions (Units : mm)
0.6±0.05
0.27±0.03
CATHODE MARK
0.13±0.03
ROHM : VMD2
EIAJ :
JEDEC :
0.5±0.05
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak ∗
Junction temperature
Storage temperature
∗ 60Hz, 1cyc.
Symbol
VR
IO
IFSM
Tj
Tstg
Limits
30
100
1
125
−40~+125
Unit
V
mA
A
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Forward voltage
VF −
Reverse current
IR −
∗ Please pay attention to static electricity when handling.
Typ.
−
−
Max.
0.350
10
Unit
V IF=10mA
µA VR=10V
Conditions
1/2
|
|||
Pages | Pages 3 | ||
Télécharger | [ RB521G-30 ] |
No | Description détaillée | Fabricant |
RB521G-30 | SCHOTTKY BARRIER DIODE | Pan Jit International |
RB521G-30 | SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE | SEMTECH |
RB521G-30 | Schottky barrier Diode | JCET |
RB521G-30 | Schottky Barrier Diode | MCC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |