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ROHM Semiconductor - Schottky barrier diode

Numéro de référence RB501V-40
Description Schottky barrier diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB501V-40 fiche technique
Schottky Barrier Diode
RB501V-40
lApplication
Low current rectification
lDimensions (Unit : mm)
1.25±0.1
0.1±0.1
    0.05
Datasheet
lLand size figure (Unit : mm)
0.9MIN.
lFeatures
1) Ultra Small mold type.
(UMD2)
2) Low IR
3) High reliability.
lConstruction
Silicon epitaxial planar
UMD2
lStructure
0.3±0.05
0.7±0.2
    0.1
ROHM : UMD2 JEITA : SC-90/A
JEDEC :SOD-323
dot (year week factory)
lTaping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φf11..5555±00.0.055
Cathode
Anode
0.3±0.1
1.40±0.1
lAbsolute maximum ratings (Ta= 25°C)
Parameter
Symbol
4.0±0.1
φf11.0.055
Limits
Unit
1.0±0.1
Reverse voltage (repetitive peak)
VRM
45
V
Reverse voltage (DC)
VR 40
V
Average rectified forward current Io 100 mA
Forward current surge peak (60Hz1cyc) IFSM
1
A
Junction temperature
Tj 125 °C
Storage temperature
Tstg
-40 to +125
°C
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max.
Unit
Conditions
Forward voltage
Reverse current
Capacitance between terminals
VF1
-
- 0.55
V IF=100mA
VF2
-
- 0.34
V IF=10mA
IR - - 30 mA VR=10V
Ct - 6.0 - pF VR=10V , f=1MHz
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/5
2013.04 - Rev.C

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