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ROHM Semiconductor - Schottky barrier diode

Numéro de référence RB495
Description Schottky barrier diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB495 fiche technique
Diodes
Schottky barrier diode
RB495D
RB495D
!Applications
Low current rectification
!Features
1) Small surface mounting type. (SMD3)
2) Two diodes with common cathode for excellent
installation efficiency.
3) High reliability.
!Construction
Silicon epitaxial planar
!Circuit
!External dimensions (Units : mm)
2.9±0.2
1.9±0.2
0.95 0.95
1.1
+0.2
0.1
0.8±0.1
0~0.1
0.4
+0.1
0.05
0.15+−00..106
(All leads have same dimensions)
ROHM : SMD3
EIAJ : SC-59
JEDEC : SOT-346
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Peak reverse voltage
VRM
DC reverse voltege
Mean rectifying current1
Peak forward surge current2
VR
IO
IFSM
Junction temperature
Tj
Storage temperature
Tstg
Operating temperture
Topr
1 Mean output current per element : IO / 2
2 60Hz for 1
Limits
40
25
0.4
2
125
40~+125
30~+85
Unit
V
V
A
A
°C
°C
°C
!Electrical characteristics (Ta = 25°C)
Parameter
Forward voltage
Reverse current
Symbol
VF1
VF2
IR
Min.
Note) ESD sensiteve product handling required.
Typ.
Max.
0.30
0.50
70
Unit
V IF=10mA
V IF=200mA
µA VR=25V
Conditions

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