DataSheetWiki


RB461F fiches techniques PDF

ROHM Semiconductor - Schottky barrier diode

Numéro de référence RB461F
Description Schottky barrier diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





1 Page

No Preview Available !





RB461F fiche technique
Data Sheet
Schottky Barrier Diode
RB461F
Applications
Low power rectification
Dimensions (Unit : mm)
Land size figure (Unit : mm)
1.3
Features
1)Small mold type. (UMD3)
2)Low VF.
3)High reliability
Construction
Silicon epitaxial planer
2.0±0.2
0.3±0.1
Eachleadhas same dimension
同寸法
0.15±0.05
(3)
(2)
(0.65) (0.65)
1.3±0.1
(1)
0~0.1
0.7±0.1
0.9±0.1
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot (year week factory)
Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
0.65
0.8MIN
UMD3
Structure
0.3±0.1
2.25±0.1
     0
4.0±0.1
φ0.5±0.05
1.25±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz1cyc) (*1)
Junction temperature
Storage temperature
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Limits
25
20
0.7
3
125
40 to 125
Unit
V
V
A
A
°C
°C
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
VF - - 0.49
IR - - 200
Unit Conditions
V IF=700mA
μA VR=20V
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.C

PagesPages 4
Télécharger [ RB461F ]


Fiche technique recommandé

No Description détaillée Fabricant
RB461F SCHOTTKY BARRIER DIODE JCET
JCET
RB461F Schottky Barrier Diode Galaxy Semi-Conductor
Galaxy Semi-Conductor
RB461F Schottky Barrier Diodes LGE
LGE
RB461F Schottky barrier diode Kexin
Kexin

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche