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ROHM Semiconductor - Schottky barrier diode

Numéro de référence RB420D
Description Schottky barrier diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB420D fiche technique
RB420D
Schottky Barrier Diode
                                                  Outline
VR 40 V
Io 100 mA
IFSM 1 A
Features
High reliability
Small mold type
Low VF
Inner Circuit
Data sheet
   
 
 
 
 
 
 
 
 
   
Application
Packaging Specifications
Small current rectification
Packing
Embossed Tape
Reel Size(mm)
180
Structure
Taping Width(mm)
Basic Ordering Unit(pcs)
8
3000
Epitaxial planar
Taping Code
T146
Marking
D3B
Absolute Maximum Ratings (Ta = 25ºC unless otherwise stated)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
Reverse voltage
VRM Duty0.5
VR Reverse direct voltage
40 V
40 V
Average rectified forward current
Io
Glass epoxy mounted60Hz half sin
waveformresistive load
100
mA
Peak forward surge current
IFSM
60Hz half sin waveform
Non-repetitiveone cycleTa=25
Junction temperature
Tj -
Storage temperature
Tstg -
                            
1A
125
-40 125
          
Characteristics (Ta = 25ºC unless otherwise stated)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF
IF=10mA
- - 0.45 V
Reverse current
IR
VR=10V
- - 1 μA
Capacitance between terminals
Ct
VR=10V f=1MHz
- 6 - pF
Cautionstatic electricity
Attention
                                                                                        
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© 2016 ROHMCo., Ltd.All rights reserved.
1/4
  2016/09/26_Rev.001

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