(PDF) RB160M-60 Datasheet - Shottky barrier diode

Número de pieza	RB160M-60
Descripción	Shottky barrier diode
Fabricantes	ROHM Semiconductor
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No Preview Available ! Data Sheet Schottky Barrier Diode RB160M-60 Applications General rectification Dimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05 Land size figure (Unit : mm) 1.2 Features 1)Small power mold type.（PMDU） 2)Low IR 3)High reliability Construction Silicon epitaxial planar 0.9±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1 PMDU Structure Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.25±0.05 1.81±0.1 4.0±0.1 φ1.0±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature VRM VR Io IFSM Tj Storage temperature Tstg (*1)Mounting on epoxi board. 180°Half sine wave Limits 60 60 1 30 150 40 to 150 Unit V V A A C C 1.5MAX Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol Min. Typ. Max. VF - 0.49 0.55 IR - 7.0 50 Ct - 40 - Unit Conditions V IF=1.0A μA VR=60V pF VR=10V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.E 1 page

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PDF RB160M-60 Data sheet ( Hoja de datos )