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ROHM Semiconductor - Schottky barrier diode

Numéro de référence RB051L-40
Description Schottky barrier diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB051L-40 fiche technique
Data Sheet
Schottky Barrier Diode
RB051L-40
Applications
General rectification
Features
1)Small power mold type.PMDS
2)Low VF
3)High reliability
Construction
Silicon epitaxial planar
Dimensions (Unit : mm)
2.6±0.2
Land size figure (Unit : mm)
2.0
31
①②
0.1±0.02
    0.1
1.5±0.2
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
① ② Manufacture Date
Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
PMDS
Structure
φ1.55 ±0.05
0.3
2.9±0.1
4.0±0 .1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forwarfd current
Forward current surge peak 60Hz1cyc
Junction temperature
Storage temperature
VRM
VR
Io
IFSM
Tj
Tstg
(*1) Mounted on epoxyboard. 180°Half sine wave
Limits
40
20
3
70
125
40 to 125
Unit
V
V
A
A
°C
°C
φ1.55
2 .8MAX
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
VF1 - - 0.35
VF2 - - 0.45
IR1 - - 1
IR2 - - 150
Unit Conditions
V IF=1.0A
V IF=3.0A
mA VR=20V
μA VR=15V
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.B

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