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Numéro de référence | RB051L-40 | ||
Description | Schottky barrier diode | ||
Fabricant | ROHM Semiconductor | ||
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1 Page
Data Sheet
Schottky Barrier Diode
RB051L-40
Applications
General rectification
Features
1)Small power mold type.(PMDS)
2)Low VF
3)High reliability
Construction
Silicon epitaxial planar
Dimensions (Unit : mm)
2.6±0.2
Land size figure (Unit : mm)
2.0
31
①②
0.1±0.02
0.1
1.5±0.2
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
① ② Manufacture Date
Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
PMDS
Structure
φ1.55 ±0.05
0.3
2.9±0.1
4.0±0 .1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forwarfd current
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
VRM
VR
Io
IFSM
Tj
Tstg
(*1) Mounted on epoxyboard. 180°Half sine wave
Limits
40
20
3
70
125
40 to 125
Unit
V
V
A
A
°C
°C
φ1.55
2 .8MAX
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
VF1 - - 0.35
VF2 - - 0.45
IR1 - - 1
IR2 - - 150
Unit Conditions
V IF=1.0A
V IF=3.0A
mA VR=20V
μA VR=15V
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.B
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Pages | Pages 7 | ||
Télécharger | [ RB051L-40 ] |
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