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Numéro de référence | RB050LA-40 | ||
Description | Shottky barrier diode | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Diodes
Shottky barrier diode
RB050LA-40
RB050LA-40
!Application
General rectification.
!Features
1) Small and Thin power mold type (PMDT).
2) Mold type.
3) High reliability.
4) Low VF.
!Structure
Silicon Epitaxial Planer
!External dimensions (Unit : mm)
1.5±0.2
CATHODE MARK
0.1±00..102
ROHM :
EIAJ : −
JEDEC :
2.6±0.1
0.95±0.1
!Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz / 1cyc.)
Junction temperature
Storage temperature
∗On the Glass epoxy substrate, Tc=90°C MAX.
Symbol
VRM
VR
IO
IFSM
Tj
Tstg
Limits
40
40
3.0
70
150
−40 to 150
Unit
V
V
A∗
A
°C
°C
!Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
VF1
VF2
IR
Min.
−
−
−
Typ.
−
−
−
Max.
0.50
0.55
100
Unit
V
V
µA
Conditions
IF=1.5A
IF=3.0A
VR=40V
1/2
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Pages | Pages 3 | ||
Télécharger | [ RB050LA-40 ] |
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