DataSheetWiki


RB050LA-40 fiches techniques PDF

ROHM Semiconductor - Shottky barrier diode

Numéro de référence RB050LA-40
Description Shottky barrier diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





1 Page

No Preview Available !





RB050LA-40 fiche technique
Diodes
Shottky barrier diode
RB050LA-40
RB050LA-40
!Application
General rectification.
!Features
1) Small and Thin power mold type (PMDT).
2) Mold type.
3) High reliability.
4) Low VF.
!Structure
Silicon Epitaxial Planer
!External dimensions (Unit : mm)
1.5±0.2
CATHODE MARK
0.1±00..102
ROHM :
EIAJ :
JEDEC :
2.6±0.1
0.95±0.1
!Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz / 1cyc.)
Junction temperature
Storage temperature
On the Glass epoxy substrate, Tc=90°C MAX.
Symbol
VRM
VR
IO
IFSM
Tj
Tstg
Limits
40
40
3.0
70
150
40 to 150
Unit
V
V
A
A
°C
°C
!Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
VF1
VF2
IR
Min.
Typ.
Max.
0.50
0.55
100
Unit
V
V
µA
Conditions
IF=1.5A
IF=3.0A
VR=40V
1/2

PagesPages 3
Télécharger [ RB050LA-40 ]


Fiche technique recommandé

No Description détaillée Fabricant
RB050LA-40 Shottky barrier diode ROHM Semiconductor
ROHM Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche