DataSheetWiki


RA45H4047M fiches techniques PDF

Mitsubishi Electric Semiconductor - MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO

Numéro de référence RA45H4047M
Description MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO
Fabricant Mitsubishi Electric Semiconductor 
Logo Mitsubishi Electric Semiconductor 





1 Page

No Preview Available !





RA45H4047M fiche technique
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA45H4047M
400-470MHz 45W 12.5V MOBILE RADIO
DESCRIPTION
The RA45H4047M is a 45-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 400- to
470-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but
may also be used for linear modulation by setting the drain
quiescent current with the gate voltage and controlling the
output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>45W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 400-470MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
BLOCK DIAGRAM
2
1
3
4
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
ORDERING INFORMATION:
ORDER NUMBER
RA45H4047M-E01
RA45H4047M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA45H4047M
MITSUBISHI ELECTRIC
1/9
23 Dec 2002

PagesPages 9
Télécharger [ RA45H4047M ]


Fiche technique recommandé

No Description détaillée Fabricant
RA45H4047M MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
RA45H4047M-01 MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
RA45H4047M-E01 MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche