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R636-10 fiches techniques PDF

Hamamatsu Corporation - PHOTOMULTlPLlER TUBES

Numéro de référence R636-10
Description PHOTOMULTlPLlER TUBES
Fabricant Hamamatsu Corporation 
Logo Hamamatsu Corporation 





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R636-10 fiche technique
PHOTOMULTlPLlER TUBES
R636–10, R758–10
UV to Near IR (R636–10:185 to 930 nm, R758–10:160 to 930nm) Spectral Response
28mm(1-1/8 Inch) Diameter, GaAs(Cs) Photocathode, 9-stage,Side-On Type
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
MateriaI
Minimum Effective Area
Window Material
Dynode
Direct Interelectrode
Capacitances
Base
SuitabIe Socket
Structure
Number of Stages
Anode to Last Dynode
Anode to All Other Electrodes
R636–10
R758–10
185 to 930
160 to 930
300 to 800
GaAs (Cs)
3 12
UV glass
Fused silica glass
Circular–cage
9
4
6
JEDEC No.B11–88
E678–11A(option)
Unit
nm
nm
mm
pF
pF
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
Average Anode Current
Value
1500
250
0.001
Unit
Vdc
Vdc
mA
CHARACTERISTlCS (at 25 )
Parameter
Luminous(2856K)
at 350nm
Cathode Sensitivity Radiant
at 632.8nm
at 852.1nm
Red/White Ratio (with R–68 filter)
Gain
Luminous(2856K)
Anode Sensitivity
Radiant
at 350nm
at 632.8nm
at 852.1nm
Anode Dark Current at 10A/lm
Time Response
Anode Pulse Rise Time
Electron Transit Time
Min.
400
100
Typ.
550
62
63
48
0.53
4.5 105
250
2.8 104
2.8 104
2.2 104
0.1
2
20
After 30min. storage in darkness
NOTE: Anode characteristics are measured with the voItage distribution ratio shown below.
Max.
2
Unit
A/lm
mA/W
A/lm
A/W
nA
ns
ns
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9
Ratio
11 11 11111 1
SuppIy Voltage : 1250Vdc, K : Cathode, Dy : Dynode, P : Anode
P
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
lnformation furnished by HAMAMATS U is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or ommissions. Specifications are
subject to change without notice. No patent right are granted to any of the circuits described herein. © 1994 Hamamatsu Photonics K.K.

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