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PDF R5900U-00-M4 Data sheet ( Hoja de datos )
| Número de pieza | R5900U-00-M4 | |
| Descripción | MULTIANODE PHOTOMULTIPLIER TUBE | |
| Fabricantes | Hamamatsu Corporation | |
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MULTIANODE
PHOTOMULTIPLIER TUBE
R5900U-00-M4
FEATURES
2 × 2 multianode
Newly developed "metal channel dynode"
High speed response
Low cross - talk
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
Material
Minimum Effective Area
Window Material
Dynode
Structure
Number of Stages
Weight
Suitable Socket
Description / Value
300 to 650
420
Bialkali
18 × 18
Borosilicate glass
Metal channel dynode
10
Approx. 26
E678-32B (option)
Unit
nm
nm
–
mm2
–
–
–
g
–
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Between Anode and Cathode
Average Anode Current
Value
900
0.1
Unit
Vdc
mA
CHARACTERISTICS (at 25 °C)
Parameter
Cathode Sensitivity
Luminous (2856 K)
Blue (CS - 5 - 58 filter)
Anode Sensitivity
Luminous (2856 K)
Gain
Anode Dark Current per Channel
(after 30min. storage in darkness)
Time Response
Anode Pulse Rise Time
Transit Time Spread (FWHM)
Pulse Linearity per Channel ( ± 2 % deviation)
Cross - talk (9 × 9 mm2 Aperture)
Uniformity Between Each Anode
Min.
50
6
25
5 × 105
–
–
–
–
–
–
Typ.
70
8
140
2 × 106
0.5
1.2
0.32
5(30a)
2
1:1.5
Max.
–
–
–
–
–
–
–
–
4
1:3
NOTE : Anode characteristics are measured with the voltage distribution ration A shown below.
a : Measured with the special voltage distribution ratio B (Tapered Bleeder) shown below.
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes
K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P
Ratio A
1.5 1.5 1.5
1
1
1
1
1
1
1
1
Ratio B (Tapered Bleeder)
1.5 1.5 1.5
1
1
1
1
1
1
2
3.6
Supply Voltage: 800 Vdc, K: Cathode, Dy: Dynode, P: Anode
Unit
µA/lm
µA/lm-b
A/lm
–
nA
ns
ns
mA
%
–
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©1999 Hamamatsu Photonics K.K
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