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R4504 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Hamamatsu Corporation - PHOTOMULTIPLIER TUBE

شماره قطعه R4504
شرح مفصل PHOTOMULTIPLIER TUBE
تولید کننده Hamamatsu Corporation 
آرم Hamamatsu Corporation 


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R4504 شرح
PHOTOMULTIPLIER TUBE
R6504
For an Operation in Magnetic Fields over 1Tesla
64 mm (2.5 Inch) Head-On, Fast Time Response, High Pulse Linearity
19-stage Fine Mesh Dynodes, Bialkali Photocathode
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
Material
Minimum Effective Area
Window
Material
Shape
Secondary Emitting Surface
Dynode
Structure
Number of Stages
Description/Value
300 to 650
420 ± 50
Bialkali
51
Borosilicate glass
Plano-plano
Bialkali
Fine mesh
19
Unit
nm
nm
mm dia.
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
Average Anode Current
Value
2300
200
0.1
CHARACTERISTICS (at 25°C)
Parameter
Min.
Cathode Sensitivity
Luminous (2856K)
Blue (CS-5-58 filter)
Anode Sensitivity
Quantum Efficiency at 390nm
Luminous (2856K)
Gain
At 0 tesla
At 1 tesla
Anode Dark Current (after 30min. storage in darkness)
Anode Pulse Rise Time
Time Response
Transit Time
Transit Time Spread (FWHM)
Pulse Linearity (at 2% Deviation)
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
Typ.
70
9.0
22
700
1.0 × 107
2.0 × 105
50
2.7
11
0.47
700
Max.
300
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 • • • • • • • • • • • • • •
Ratio
2 1 1 1 1 1 ••••••••••••••
Supply Voltage: 2000Vdc, K: Cathode, Dy: Dynode, P: Anode
Dy19 P
11
* PC board breeder assembly type is also available.
Unit
Vdc
Vdc
mA
Unit
µA/lm
µA/lm-b
%
A/lm
nA
ns
ns
ns
mA
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ' 1999 Hamamatsu Photonics K.K.

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