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Hamamatsu Corporation - PHOTOMULTIPLIER TUBE

Numéro de référence R4177-01
Description PHOTOMULTIPLIER TUBE
Fabricant Hamamatsu Corporation 
Logo Hamamatsu Corporation 





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R4177-01 fiche technique
PHOTOMULTIPLIER TUBE
R4177-01
Ruggedized, High Temperature (175°C) PMT for Oil Well Logging
13mm (1/2 Inch) Diameter, 10-Stage, Head-On Type
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
Material
Minimum Effective Area
Window Material
Dynode
Structure
Number of Stages
Suitable Socket
Description/Value
300 to 650
375
High temp. bialkali
10
Borosilicate glass
Linear focused
10
E678-13A (supplied)
Unit
nm
nm
mm dia.
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
Average Anode Current
Ambient Temperature
Value
1800
250
0.02
-80 to +175
CHARACTERISTICS (at 25°C)
Parameter
Cathode Sensitivity
Luminous (2856K)
Blue (CS 5-58 filter)
Anode Sensitivity
Luminous (2856K)
Gain
Anode Dark Current (after 30min. storage in darkness)
Time Response
Anode Pulse Rise Time
Electron Transit Time
* 1000nA at 175°C
Min.
20
10
Typ.
40
6
20
5 × 105
0.5 *
2
20
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10
Ratio
11111111111
Supply Voltage: 1500Vdc, K: Cathode, Dy: Dynode, P: Anode
P
Max.
10
Unit
Vdc
Vdc
mA
°C
Unit
µA/lm
µA/lm-b
A/lm
nA
ns
ns
ENVIRONMENTAL TESTING
Shock .................................................................................................. 100g's, 11 ± 1ms, 3 impact shocks per direction (6 directions)
Vibration ................................................................................. Sine 20g's, 50 to 2000Hz, 1oct per minute, 1 sweep per axis (3 axes)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1998 Hamamatsu Photonics K.K.

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