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Hamamatsu Corporation - HIGH-SPEED PHOTON COUNTING PHOTOMULTIPLIER TUBES

Numéro de référence R3235-01
Description HIGH-SPEED PHOTON COUNTING PHOTOMULTIPLIER TUBES
Fabricant Hamamatsu Corporation 
Logo Hamamatsu Corporation 





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R3235-01 fiche technique
HIGH–SPEED
PHOTON COUNTING
PHOTOMULTIPLIER TUBES
R3234–01, R3235–01
High–speed Photon Counting and Fluorescence Measurement
51mm(2 Inch) Diameter, 12–stage, Head–on Type
R3234–01:Borosilicate Window (300 to 650nm)
R3235–01:Synthetic Silica Window (160 to 650nm)
GENERAL
Spectral Response
Parameter
R3234–01
R3235–01
Wavelength of Maximum Response
Photocathode
MateriaI
Minimum Effective Area
Window Material
R3234–01
R3235–01
Dynode
Structure
Number of Stages
Base
SuitabIe Socket
Description/Value
300 to 650
160 to 650
420
Bialkali
10
Borosilicate glass
Synthetic silica glass
Linear focused
12
20–pin base (JEDEC No. B20–102)
E678–20A (supplied)
Unit
nm
nm
nm
mm dia.
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
Avarage Anode Current
Ambient Temperature
Value
2500
500
0.1
-30 to +50
Unit
Vdc
Vdc
mA
CHARACTERISTlCS (at 25°C)
Parameter
Cathode
Sensitivity
Luminous (2856K)
Radiant at 420nm
Blue (CS 5–58 filter)
Anode
Luminous (2856K)
Sensitivity
Radiant at 420nm
Gain
Anode Dark Current (after 30min. storage in darkness)
Anode Dark Counts
Time
Response
Anode Pulse Rise Time
Electron Transit Time
Transit Time Spread (FWHM)
Min.
60
500
Typ.
80
72
9.0
2000
2.0 106
2.5 107
1
50
1.3
28
0.45
NOTE: Anode characteristics are measured with the voItage distribution ratio shown below.
Max.
10
150
Unit
A/lm
mA/W
A/lm b
A/lm
A/W
nA
cps
ns
ns
ns
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
Electrodes
Ratio
K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 Dy12
4 1.2 1.8 1 1 1 1 1 1 1 1 1 1
SuppIy Voltage : 2000Vdc, K : Cathode, Dy : Dynode, P : Anode
P
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©1999 Hamamatsu Photonics K.K.

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