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PDF RF2172PCBA-H Data sheet ( Hoja de datos )
| Número de pieza | RF2172PCBA-H | |
| Descripción | ISM BAND 3.6V/ 250MW AMP WITH ANALOG GAIN CONTROL | |
| Fabricantes | RF Micro Devices | |
| Logotipo |  |
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Typical Applications
• BluetoothTM PA
• 2.4GHz to 2.5GHz ISM Band Systems
• 902MHz to 928MHz ISM Band Systems
RF2172
ISM BAND 3.6V, 250mW AMP WITH
ANALOG GAIN CONTROL
• 3.6V Spread-Spectrum Cordless Phones
• Portable Battery-Powered Equipment
• Spread-Spectrum Systems
Product Description
The RF2172 is a medium-power high efficiency amplifier
IC targeting 3.6V handheld systems. The device is manu-
factured on an advanced Gallium Arsenide Heterojunc-
tion Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in 2.45GHz
Bluetooth applications and frequency hopping/direct
sequence spread-spectrum cordless telephones or other
applications in the 902MHz to 928MHz ISM band. The
device is packaged in a compact 4mmx4mm QFN. The
device features analog gain control to optimize transmit
power while maximizing battery life in portable equipment
requiring up to 100mW transmit power at the antenna
port.
BLUETOOTH is a trademark owned by the Bluetooth SIG, Inc., and licensed
to RF Micro Devices, Inc.
3.75
0.10 C A
2 PLCS
12°
MAX
3.75
0.10 C B
2 PLCS
-B-
0.80
TYP
1.50
SQ.
0.75
0.50
INDEX AREA
Dimensions in mm.
0.45
0.28
Shaded pin is lead 1.
4.00
0.10 C B
2 PLCS
2.00
A
2 1.60
2 PLCS
4.00
3.20
2 PLCS
2.00
0.10 C A
2 PLCS
0.10 M C A B
0.05
0.00
1.00
0.90
0.75
0.65
C
0.05
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
1 16 15 14 13
GND 2
12 RF OUT
RF IN 3
GND 4
Bias
11 RF OUT
10 GND
56789
Functional Block Diagram
Package Style: QFN, 16-Pin, 4x4
Features
• 23.5dBm Typical Output Power
• 0dB to 28dB Variable Gain
• 45% Efficiency at Max Output
• On-Board Power Down Mode
• 2.4GHz to 2.5GHz Operation
• 902MHz to 928MHz Operation
Ordering Information
RF2172
ISM Band 3.6V, 250mW Amp with Analog Gain Con-
trol
RF2172PCBA411 Fully Assembled Evaluation Board 2.4 to 2.5GHz
RF2172PCBA410 Fully Assembled Evaluation Board 908 to 928MHz
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A11 030729
2-1
1 page  
RF2172
Evaluation Board Schematic - 915MHz
VCC2
22 nF
L1
3.9 nH
R1*
OPEN
P1-1
P1
1 VCC2 P2-1
P2
1 VAPC
2 GND
2 GND
P1-3 3 VCC3 P2-3 3 VCC1
CON3
CON3
J1
RF IN
VCC1
50 Ω μstrip
C2
22 nF
1 16 15 14 13
2 12
3 11
4
Bias
10
56789
C7
4 pF
L3
3.9 nH
L2
2.7 nH
C8
22 nF
C6
22 nF
C5
4 pF
50 Ω μstrip
C3
22 nF
R2
3 kΩ
C4
22 nF
VCC3
J2
RF OUT
VAPC
Rev A11 030729
2-5
5 Page 
POUT versus VAPC
25.0 VCC = 3.0 V, Freq = 2.45 GHz, PIN = 0 dBm
Pout@-40C
20.0 Pout@+25C
Pout@+85C
15.0
10.0
5.0
0.0
-5.0
-10.0
-15.0
0.0
30.0
25.0
20.0
0.5 1.0 1.5 2.0 2.5
VAPC (V)
POUT versus PIN over R2
VCC = VAPC = 3.6 V, Freq = 2450 MHz
Pout(100)
Pout(200)
Pout(300)
Pout(400)
15.0
10.0
5.0
0.0
-5.0
-10.0
-25.0
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
-25.0
-20.0
-15.0
-10.0
PIN (dBm)
-5.0
0.0
Efficiency versus PIN over R2
VCC = VAPC = 3.6 V, Freq = 2450 MHz
Eff(100)
Eff(200)
Eff(300)
Eff(400)
-20.0
-15.0
-10.0
PIN (dBm)
-5.0
0.0
Rev A11 030729
3.0
5.0
5.0
RF2172
ICC versus VAPC
0.14 VCC = 3.0 V, Freq = 2.45 GHz, PIN = 0 dBm
Icc@-40C
0.12 Icc@+25C
Icc@+85C
0.10
0.08
0.06
0.04
0.02
0.00
0.00
0.25
0.20
0.50 1.00 1.50 2.00 2.50
VAPC (V)
ICC versus PIN over R2
VCC = VAPC = 3.6 V, Freq = 2450 MHz
Icc(100)
Icc(200)
Icc(300)
Icc(400)
3.00
0.15
0.10
0.05
0.00
-25.00
0.012
0.010
0.008
-20.00
-15.00
-10.00
PIN (dBm)
-5.00
0.00
IAPC versus VAPC over R2
VCC = 3.6 V, PIN = 0 dBm, Freq = 2450 MHz
Iapc(100)
Iapc(200)
Iapc(300)
Iapc(400)
5.00
0.006
0.004
0.002
0.000
-0.002
-0.004
0.000
0.400
0.800
1.200
1.600 2.000
VAPC (V)
2.400
2.800
3.200
3.600
2-11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet RF2172PCBA-H.PDF ] | |
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