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PDF RF2162 Data sheet ( Hoja de datos )
| Número de pieza | RF2162 | |
| Descripción | 3V 900MHZ LINEAR AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
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Preliminary
0
RF2162
3V 900MHz LINEAR AMPLIFIER
Typical Applications
• 3V CDMA/AMPS Cellular Handsets
• 3V J-CDMA/TACS Cellular Handsets
• 3V TDMA/AMPS Cellular Handsets
• Spread-Spectrum Systems
• CDPD Portable Data Cards
• Portable Battery-Powered Equipment
Product Description
The RF2162 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA/AMPS hand-held digital cellular equipment,
spread-spectrum systems, and other applications in the
800MHz to 960MHz band. The RF2162 has an analog
bias control voltage to maximize efficiency. The device is
self-contained with 50Ω input and the output can be eas-
ily matched to obtain optimum power, efficiency, and lin-
earity characteristics. The device is packaged in a
compact 4mmx4mm, 16-pin, leadless chip carrier.
3.75
0.10 C A
2 PLCS
12°
MAX
3.75
0.10 C B
2 PLCS
-B-
0.80
TYP
1.50
SQ.
0.75
0.50
INDEX AREA
Dimensions in mm.
0.45
0.28
Shaded pin is lead 1.
4.00
0.10 C B
2 PLCS
2.00
A
2 1.60
2 PLCS
4.00
3.20
2 PLCS
2.00
0.10 C A
2 PLCS
0.10 M C A B
1.00
0.90
0.05
0.00 0.75
0.65
C
0.05
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
1 16 15 14 13
GND 2
12 RF OUT
GND 3
11 RF OUT
RFIN 4
10 RF OUT
56 7 89
Functional Block Diagram
Rev A19 060208
Package Style: QFN, 16-Pin, 4x4
Features
• Single 3V Supply
• 29dBm Linear Output Power
• 29dB Linear Gain
• 35% Linear Efficiency
• On-board Power Down Mode
• 800MHz to 960MHz Operation
Ordering Information
RF2162
3V 900MHz Linear Amplifier
RF2162 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
2-227
1 page  
Preliminary
RF2162
Application Schematic - US TDMA
P1-1
Interstage tuning for
centering frequency response
C30
TL5
100 pF
3.6 pF
1.5 nH
TL7
1 16 15 14 13
100 pF
To Vary Gain
820 Ω
2
3
12
TL1
11
RF IN
100 pF
Matching network for
optimum input return loss
15 nH
4 10
56 7 89
0Ω
100 pF
27 nH
Bias Return
10 nF
Bypassing for VCC
2nd Harmonic Trap
100 pF
16 nH* 1 pF
TL2 1.5 nH TL3 100 pF
12 pF**
4.7 pF**
RF OUT
Matching network for
optimum load
impedance
VREG
VMODE
1 kΩ
100 pF
Bypassing for
VREG1 and VREG2
* L1 is a High Q inductor (i.e.,Coilcraft 0805HQ-series).
**C1 and C14 are High Q capacitors (i.e., Johanson C-series).
Rev A19 060208
2-231
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet RF2162.PDF ] | |
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