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RF2126PCBA fiches techniques PDF

RF Micro Devices - HIGH POWER LINEAR AMPLIFIER

Numéro de référence RF2126PCBA
Description HIGH POWER LINEAR AMPLIFIER
Fabricant RF Micro Devices 
Logo RF Micro Devices 





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RF2126PCBA fiche technique
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Typical Applications
• 2.5GHz ISM Band Applications
• Digital Communication Systems
• PCS Communication Systems
RF2126
HIGH POWER LINEAR AMPLIFIER
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
2
Product Description
The RF2126 is a high-power, high-efficiency, linear ampli-
fier IC. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT)
process and has been designed for use as the final RF
amplifier in 2.45 GHz ISM applications such as WLAN
and POS terminals. The part will also function as the final
stage in digital PCS phone transmitters requiring linear
amplification operating between 1800MHz and
2500MHz. The device is packaged in an 8-lead plastic
package with a backside ground. The device is self-con-
tained with the exception of the output matching network
and power supply feed line. It produces a typical output
power level of 1W.
3.90
± 0.10
0.43
± 0.05
-A-
0.05
± 0.05
Exposed
Heat Sink
4.90
± 0.10
1.27
2.70
± 0.10
8° MAX
0° MIN
6.00
± 0.20
Dimensions in mm.
0.22
± 0.03
0.60
± 0.15
1.40
± 0.10
1.70
± 0.10
NOTES:
1. Shaded lead is pin 1.
2. Lead coplanarity - 0.10 with respect to datum "A".
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
RF IN 1
8 RF OUT
RF IN 2
7 RF OUT
PC 3
VCC 4
BIAS
CIRCUIT
6 RF OUT
5 RF OUT
PACKAGE BASE
GND
Functional Block Diagram
Package Style: SOIC-8 Slug
Features
• Single 3V to 6.5V Supply
• 1.3W Output Power
• 12dB Gain
• 45% Efficiency
• Power Down Mode
• 1800MHz to 2500MHz Operation
Ordering Information
RF2126
High Power Linear Amplifier
RF2126 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A5 010207
2-73

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