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PDF RF2114PCBA Data sheet ( Hoja de datos )

Número de pieza RF2114PCBA
Descripción MEDIUM POWER LINEAR AMPLIFIER
Fabricantes RF Micro Devices 
Logotipo RF Micro Devices Logotipo



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RF2114
2 MEDIUM POWER LINEAR AMPLIFIER
Typical Applications
• Digital Communication Systems
• Portable Battery-Powered Equipment
• Spread-Spectrum Communication Systems • Commercial and Consumer Systems
• Driver for Higher Power Linear Applications • Base Station Equipment
2
Product Description
The RF2114 is a medium to high power linear amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as the final linear
RF amplifier in UHF radio transmitters operating between
1MHz and 600MHz. It may also be used as a driver
amplifier in higher power applications. The device is self-
contained with the exception of the output matching net-
work, power supply feed line, and bypass capacitors. The
device can be used in 3-cell battery applications. The
maximum CW output at 3V is 125mW. The unit has a
total gain of 35dB, depending upon the output matching
network.
0.156
0.148
.018
.014
0.347
0.339
0.050
0.010
0.004
0.252
0.236
8° MAX
0° MIN
0.0500
0.0164
0.059
0.057
0.010
0.007
Optimum Technology Matching® Applied
Si BJT
!GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
RF1 IN 1
GND 2
GND 3
PD 4
RF2 IN 5
RF1 OUT 6
VCC1 7
PRE AMP
PA
BIAS CIRCUIT
14 RF2 OUT
13 RF2 OUT
12 GND
11 GND
10 GND
9 RF2 OUT
8 RF2 OUT
Package Style: SOIC-14
Features
• 1MHz to 600MHz Operation
• Over 800mW CW Output Power
• 35dB Small Signal Gain
• Single 2.7V to 6.5V Supply
• 45% Efficiency
• Digitally Controlled Power Down Mode
Ordering Information
RF2114
Medium Power Linear Amplifier
RF2114 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A5 001222
2-33

1 page




RF2114PCBA pdf
RF2114
Evaluation Board Schematic (150MHz)
(Download Bill of Materials from www.rfmd.com.)
J1
RF IN
50 Ω µstrip
C1
330 pF
L1
100 nH
C2
6.8 pF
P1-3
C6
1 nF
C3
120 pF
L3
1200 nH
P1-1
C12
10 nF
L4
150 nH
C11
10 µF
C7
330 pF
C10
1 nF
2114400 Rev A
136 MHz to 178 MHz
1
2 PRE
AMP
3
14
13
12
L2
22 nH
C5
330 pF
C4
24 pF
50 Ω µstrip
J2
RF OUT
4 11
5 10
PA
69
7 BIAS CIRCUIT
L6
8 5.6 nH
L5
22 nH
C9
33 pF
P1-1
P1-3
P1
1 VCC
2 GND
3 PC
C8
330 pF
2
Rev A5 001222
2-37

5 Page










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