RF1S9640SM Datasheet PDF - Intersil Corporation
| Part Number | RF1S9640SM | |
| Description | 11A/ 200V/ 0.500 Ohm/ P-Channel Power MOSFETs | |
| Manufacturers | Intersil Corporation | |
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There is a preview and RF1S9640SM download ( pdf file ) link at the bottom of this page. Total 7 Pages | ||
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Data Sheet
IRF9640, RF1S9640SM
July 1999 File Number 2284.2
11A, 200V, 0.500 Ohm, P-Channel Power
MOSFETs
These are P-Channel enhancement mode silicon-gate
power field-effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers and as drivers for
other high-power switching devices. The high input
impedance allows these types to be operated directly from
integrated circuits.
Formerly developmental type TA17522.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9640
TO-220AB
IRF9640
RF1S9640SM
TO-263AB
RF1S9640
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9640SM9A.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 11A, 200V
• rDS(ON) = 0.500Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-33
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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IRF9640, RF1S9640SM
Typical Performance Curves Unless Otherwise Specified (Continued)
1.15
ID = 250µA
1.10
1.05
1.00
0.95
0.90
0.85
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
8
6
TJ = -55oC
TJ = 25oC
TJ = 125oC
4
2
0 -10 -20 -30 -40 -50
I D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
0
2000
1600
1200
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
CISS
800
400
00
COSS
CRSS
10 20 30 40
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
-100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TJ = 150oC
-10
TJ = 25oC
-1.0
-0.1
-0.4
-0.6 -0.8
-1.0 -1.2 -1.4
-1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
-1.8
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
ID = -11A
-5
VDS = -40V
-10 VDS = -100V
VDS = -160V
0 20 40 60 80
Qg(TOT), Total GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-37
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for RF1S9640SM electronic component. |
| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ RF1S9640SM.PDF Datasheet ] | |
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| Part Number | Description | MFRS |
| RF1S9640SM | The function is 11A/ 200V/ 0.500 Ohm/ P-Channel Power MOSFETs. Intersil Corporation | |
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