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Número de pieza | RF1S70N06SM | |
Descripción | 70A/ 60V/ 0.014 Ohm/ N-Channel Power MOSFETs | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RF1S70N06SM (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! RFG70N06, RFP70N06, RF1S70N06SM
Data Sheet
July 1999 File Number 3206.5
70A, 60V, 0.014 Ohm, N-Channel Power
MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers and
relay drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49007.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG70N06
TO-247
RFG70N06
RFP70N06
TO-220AB
RFP70N06
RF1S70N06SM
TO-263AB
F1S70N06
NOTE: When ordering use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.
Packaging
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 70A, 60V
• rDS(on) = 0.014Ω
• Temperature Compensated PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-474
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page RFG70N06, RFP70N06, RF1S70N06SM
Typical Performance Curves Unless Otherwise Specified (Continued)
5000
4000
3000
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGS
2000
1000
0
0
COSS
CRSS
5 10 15 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
25
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
60
VDD = BVDSS
45
VDD = BVDSS
RL = 0.86Ω
30
IG(REF) = 2.2mA
VGS = 10V
0.75 BVDSS
0.50 BVDSS
15 0.25 BVDSS
10
7.5
5
2.5
0
20 IG(REF)
IG(ACT)
t, TIME (µs)
80 IG(REF)
IG(ACT)
0
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
L
DUT
+
VDD
-
IAS
0.01Ω
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VDS
VGS
RGS
RL
DUT
+
VDD
-
VGS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
4-478
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 17. SWITCHING WAVEFORMS
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RF1S70N06SM.PDF ] |
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