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RF1S45N02L fiches techniques PDF

Intersil Corporation - 45A/ 20V/ 0.022 Ohm/ N-Channel Logic Level Power MOSFETs

Numéro de référence RF1S45N02L
Description 45A/ 20V/ 0.022 Ohm/ N-Channel Logic Level Power MOSFETs
Fabricant Intersil Corporation 
Logo Intersil Corporation 





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RF1S45N02L fiche technique
May 1997
RFP45N02L,
RF1S45N02L, RF1S45N02LSM
45A, 20V, 0.022 Ohm, N-Channel
Logic Level Power MOSFETs
Features
• 45A, 20V
• rDS(ON) = 0.022
Temperature Compensating PSPICE Model
• Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
Description
The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are
N-Channel power MOSFETs manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from inte-
grated circuits.
Formerly developmental type TA49243.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP45N02L
TO-220AB
FP45N02L
RF1S45N02L
TO-262AA
F45N02L
RF1S45N02LSM
TO-263AB
F45N02L
NOTE: When ordering, use the entire part number. Add the suffix,
9A, to obtain the TO-263AB variant in tape and reel, e.g.
RF1S45N02LSM9A.
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Symbol
D
G
S
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
MA
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
File Number 4342

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RF1S45N02L 45A/ 20V/ 0.022 Ohm/ N-Channel Logic Level Power MOSFETs Intersil Corporation
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