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RF1S40N10SM fiches techniques PDF

Intersil Corporation - 40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs

Numéro de référence RF1S40N10SM
Description 40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs
Fabricant Intersil Corporation 
Logo Intersil Corporation 





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RF1S40N10SM fiche technique
RFG40N10, RFP40N10, RF1S40N10SM
Data Sheet
July 1999 File Number 2431.3
40A, 100V, 0.040 Ohm, N-Channel Power
MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA9846
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG40N10
TO-247
RFG40N10
RFP40N10
TO-220AB
RFP40N10
RF1S40N10SM
TO-263AB
F1S40N10
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e. RF1S40N10SM9A.
Packaging
DRAIN
(FLANGE)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 40A, 100V
• rDS(ON) = 0.040
• UIS Rating Curve
• SOA is Power Dissipation Limited
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-450
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

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