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PDF RF1S22N10SM Data sheet ( Hoja de datos )
| Número de pieza | RF1S22N10SM | |
| Descripción | 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Data Sheet
RFP22N10, RF1S22N10SM
January 2002 File Number 2385.3
22A, 100V, 0.080 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA9845.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP22N10
TO-220AB
RFP22N10
RF1S22N10SM
TO-263AB
F1S22N10
NOTE: When ordering use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, e.g. RF1S22N10SM9A.
Features
• 22A, 100V
• rDS(ON) = 0.080Ω
• UIS SOA Rating Curve (Single Pulse)
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
©2002 Fairchild Semiconductor Corporation
RFP22N10, RF1S22N10SM Rev. B
1 page  
RFP22N10, RF1S22N10SM
Test Circuits and Waveforms
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
L
DUT
+
VDD
-
IAS
0.01Ω
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 13. UNCLAMPED ENERGY WAVEFORMS
VDS
VGS
RGS
RL
DUT
+
VDD
-
VGS
FIGURE 14. SWITCHING TIME TEST CIRCUIT
VDS
RL
VGS
IG(REF)
DUT
+
VDD
-
FIGURE 16. GATE CHARGE TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
VDD
Qgs
Qg(TOT)
Qgd
VGS
VDS
0
IG(REF)
0
FIGURE 17. GATE CHARGE WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RFP22N10, RF1S22N10SM Rev. B
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RF1S22N10SM.PDF ] | |
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