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Numéro de référence | RDN050N20 | ||
Description | Switching (200V/ 5A) | ||
Fabricant | ETC | ||
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1 Page
Transistors
Switching (200V, 5A)
RDN050N20
RDN050N20
!Features
1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.
!Application
Switching
!Structure
Silicon N-channel
MOS FET
!External dimensions (Units : mm)
TO-220FN
10.0
+0.3
−0.1
3.2±0.2
4.5
+0.3
−0.1
2.8
+0.2
−0.1
(1) Gate
(2) Drain
(3) Source
1.2
1.3
0.8
2.54±0.5
2.54±0.5
0.75
+0.1
−0.05
(1) (2) (3)
2.6±0.5
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current
Continuous
Pulsed
ID
IDP ∗1
Reverse Drain
Current
Avalanche Current
Avalanche Energy
Continuous
Pulsed
IDR
IDRP
IAS
EAS
∗1
∗2
∗2
Total Power Dissipation (TC=25°C)
PD
Channel Temperature
Tch
Storage Temperature
Tstg
∗1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C
Limits
200
±30
5
20
5
20
5
75
30
150
−55 to 150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
!Equivalent Circuit
Drain
Gate
∗Gate
Protection
Diode
Source
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
1/3
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Pages | Pages 4 | ||
Télécharger | [ RDN050N20 ] |
No | Description détaillée | Fabricant |
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