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Numéro de référence | RHU002N06 | ||
Description | Switching (60V/ 200mA) | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Transistors
Switching (60V, 200mA)
RHU002N06
RHU002N06
zFeatures
1) Low on-resistance.
2) High ESD.
3) High-speed switching.
4) Low-voltage drive (4V).
5) Easily designed drive circuits.
6) Easy to use in parallel.
zStructure
Silicon N-channel
MOSFET transistor
zEquivalent circuit
(3)
zExternal dimensions (Unit : mm)
1.25
2.1
0.1Min.
Each lead has same dimensions
Abbreviated symbol : KP
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
(1) Source
(2) Gate
(3) Drain
(2)
∗Gate Protection Diode.
(1)
(1) Source
(2) Gate
(3) Drain
∗ A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when fixed voltages are
exceeded.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
60
±20
200
800
200
800
200
150
−55 to +150
Unit
V
V
mA
mA
mA
mA
mW
˚C
˚C
1/4
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Pages | Pages 5 | ||
Télécharger | [ RHU002N06 ] |
No | Description détaillée | Fabricant |
RHU002N06 | Switching (60V/ 200mA) | ROHM Semiconductor |
RHU002N06FRA | 4V Drive Nch MOS FET | ROHM Semiconductor |
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