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Numéro de référence | RHRG7590 | ||
Description | 75A/ 700V - 1000V Hyperfast Diodes | ||
Fabricant | Intersil Corporation | ||
Logo | |||
RHRG7570, RHRG7580, RHRG7590, RHRG75100
Data Sheet
April 1995 File Number 3923.1
75A, 700V - 1000V Hyperfast Diodes
RHRG7570, RHRG7580, RHRG7590 and RHRG75100
(TA49068) are hyperfast diodes with soft recovery character-
istics (tRR < 85ns). They have half the recovery time of
ultrafast diodes and are silicon nitride passivated ion-
implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping
diodes and rectifiers in a variety of switching power supplies
and other power switching applications. Their low stored
charge and hyperfast soft recovery minimize ringing and elec-
trical noise in many power switching circuits reducing power
loss in the switching transistors.
Ordering Information
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RHRG7570
TO-247
RHRG7570
RHRG7580
TO-247
RHRG7580
RHRG7590
TO-247
RHRG7590
RHRG75100
TO-247
RHRG75100
NOTE: When ordering, use the entire part number.
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . +175oC
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Package
JEDEC STYLE TO-247
CATHODE
(BOTTOM
SIDE METAL)
ANODE
CATHODE
Symbol
K
A
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
RHRG7570
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . .VRRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . VRWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR
Average Rectified
(TC = +52oC)
Forward
Current
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IF(AV)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . .IFSM
(Square Wave, 20kHz)
700
700
700
75
150
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . .IFSM
(Halfwave, 1 Phase, 60Hz)
750
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Avalanche Energy (L = 40mH) (See Figures 10 and 11). . . . EAVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . TSTG, TJ
190
50
-65 to +175
RHRG7580
800
800
800
75
150
750
190
50
-65 to +175
RHRG7590
900
900
900
75
RHRG75100
1000
1000
1000
75
UNITS
V
V
V
A
150 150 A
750 750 A
190
50
-65 to +175
190
50
-65 to +175
W
mj
oC
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
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Pages | Pages 4 | ||
Télécharger | [ RHRG7590 ] |
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